prof.dr. A.J.P. Theuwissen

1. Pixel Optimizations and Digital Calibration Methods of a CMOS Image Sensor Targeting High Linearity
   Fei Wang; Albert Theuwissen;
   IEEE Transactions on Circuits and Systems I: Regular Papers,
   Volume 66, Issue 3, pp. 930--940, March 2019. DOI: 10.1109/tcsi.2018.2872627
   
   Abstract: ...

   In this paper, different methodologies are employed to improve the linearity performance of a prototype CMOS image sensor (CIS). First, several pixel structures, including a novel pixel design based on a capacitive trans-impedance amplifier (CTIA), are proposed to achieve a higher pixel-level linearity. Furthermore, three types of digital linearity calibration methods are explored. A prototype image sensor designed in 0.18-μm, 1-poly, and 4-metal CIS technology with a pixel array of 128×160 is used to verify these linearity improvement techniques. The measurement results show that the proposed CTIA pixel has the best linearity result out of all pixel structures. Meanwhile, the proposed calibration methods further improved the linearity of the CIS without changing the pixel structure. The pixel mode method achieves the most significant improvement on the linearity. One type of 4T pixel attains a nonlinearity of 0.028% with pixel mode calibration, which is two times better than the state of the art. Voltage mode (VM) and current mode (CM) calibration methods get rid of the limitation on the illumination condition during calibration operation; especially, CM calibration can further suppress the nonlinearity caused by the integration capacitor C FD on the floating diffusion node, which is remnant in VM.

2. Compensation for Process and Temperature Dependency in a CMOS Image Sensor
   Shuang Xie; Albert Theuwissen;
   Sensors,
   Volume 19, Issue 4, pp. 870, February 2019. DOI: 10.3390/s19040870

3. A CMOS-Imager-Pixel-Based Temperature Sensor for Dark Current Compensation
   Shuang Xie; Accel Abarca Prouza; Albert Theuwissen;
   IEEE Transactions on Circuits and Systems II: Express Briefs,
   pp. 1--1, May 2019. DOI: 10.1109/tcsii.2019.2914588
   
   Abstract: ...

   This paper proposes employing each of the classical 4 transistor (4T) pinned photodiode (PPD) CMOS image sensor (CIS) pixels, for both imaging and temperature measurement, intended for compensating the CISs’ dark current and dark signal non-uniformity (DSNU). The proposed temperature sensors rely on the thermal behavior of MOSFETs working in subthreshold region, when biased with ratiometric currents sequentially. Without incurring any additional hardware or penalty to the CIS, they are measured to have thermal curvature errors less than ±0.3 ∘C and 3 σ process variations within ±1.3 ∘C, from 108 sensors on 4 chips, over a temperature range from -20 ∘C to 80 ∘C. Each of them consumes 576 nJ/conversion at a conversion rate of 62 samples/s, when quantized by 1st-order 14 bit delta-sigma ADCs and fabricated using 0.18 μm CIS technology. Experimental results show that they facilitate digital compensation for average dark current and DSNU by 78 % and 20 %, respectively.

4. Suppression of spatial and temporal noise in a CMOS image sensor
   Shuang Xie; Albert Theuwissen;
   IEEE Sensors Journal,
   pp. 1--1, 2019. DOI: 10.1109/jsen.2019.2941122
   
   Abstract: ...

   This paper presents methodologies for suppressing the spatial and the temporal noise in a CMOS image sensor (CIS). First of all, it demonstrates by using a longer-length column bias transistor, both the fixed pattern noise (FPN) and temporal noise can be suppressed. Meantime, it employs column-level oversampling delta-sigma ADCs to suppress temporal noise as well as to facilitate the realization of the thermal compensation of dark signal non-uniformity (DSNU). In addition, the image pixels are re-configured as temperature sensors with inaccuracies within ±0.65°C, between -20 and 80°C. If the dark current and its non-uniformities are caused by thermal gradients, the obtained in-pixel thermal information can be employed to compensate for the measured dark current by 95 % and DSNU, up to 13 %. All the column-level 13 bit 2nd-order incremental delta-sigma ADCs are measured with SNR around 65 dB and INL around 1.5 LSB, when tested with a -8 dB input signal and sampling at 2 MHz with an oversampling ratio (OSR) of 128, when the full scale voltage is 2 Vp-p. The 4T Pinned Photodiode (PPD) CIS is measured to have a temporal noise of 34 μV rms (with an OSR of 128, or, an input referred temporal noise of 0.5 e-rms, with a conversion gain, CG, of 73 μV/ e- ), a column gain FPN of 0.06 %, a dynamic range (DR) of 92 dB (with OSR=512), as well as a linearity of 1 %. It has a measured DSNU of 3.2 %, after the thermal compensation using the in-pixel temperature sensors, a dark current of 290 pA/cm2 and 15 pA/cm2, measured at 60 °C, before and after the thermal compensation, respectively.

5. All-MOS self-referenced temperature sensor
   Shuang Xie; Albert Theuwissen;
   Electronics Letters,
   Volume 55, Issue 19, pp. 1045--1047, September 2019. DOI: 10.1049/el.2019.1784
   
   Abstract: ...

   This Letter presents an all-MOS self-referenced temperature sensor, intended for thermal compensation of dark current in CMOS image sensors (CIS). Its thermal sensing front-end is based on a self-biased nMOS pair working in the subthreshold region. Biased with ratiometric currents, the differential voltage output of the nMOS pair is proportional to the absolute temperature. The thermal sensing voltage is quantised by a self-referenced first-order incremental delta–sigma ADC, which obtains its reference voltage from the thermal sensing front-end. This reference voltage has been virtually attenuated, through switch capacitor charge sampling, to improve the resolution of the temperature sensor. Measured between −20 and 80°C, the proposed temperature sensor achieves an inaccuracy within ±0.55°C.

6. On-Chip Smart Temperature Sensors for Dark Current Compensation in CMOS Image Sensors
   Shuang Xie; Albert Theuwissen;
   IEEE Sensors Journal,
   Volume 19, Issue 18, pp. 7849--7860, September 2019. DOI: 10.1109/jsen.2019.2919655
   
   Abstract: ...

   This paper proposes various types of on-chip smart temperature sensors, intended for thermal compensation of dark current in CMOS image sensors (CIS). It proposes four different architectures of metal-oxide-semiconductor (MOS)-based and bipolar junction transistor (BJT)-based temperature sensors inside and outside the CIS array. Both of the MOS-based temperature sensors make use of the thermal dependence of MOS transistors working in the subthreshold region with ratiometric currents and are quantized by the 14-bit first-order incremental delta-sigma analog-to-digital converters (ADCs). Fabricated using 0.18-μm CIS technology and measured on four chips, the proposed temperature sensors are compared, on their resolution and process variability, as well as on their effects on the neighboring image pixels implemented on the same chip. Experimental results show that the MOS-based temperature sensors inside and outside the array consume a power of 36 and 40 μW, respectively, both achieving 3-sigma (σ) inaccuracy less than ±0.75 °C on four different chips, over a temperature range from -20°C to 80 °C at a conversion time of 16 ms. The temperature sensors facilitate the digital thermal compensation of dark current in the CIS array, by at least 80%, in experiments.

7. A 10 bit 5 MS/s column SAR ADC with digital error correction for CMOS image sensors
   Shuang Xie; Albert Theuwissen;
   IEEE Transactions on Circuits and Systems II: Express Briefs,
   pp. 1--1, May 2019. DOI: 10.1109/tcsii.2019.2928204
   
   Abstract: ...

   This paper proposes a SAR ADC whose readout speed is improved by 33%, through applying a digital error correction (DEC) method, compared to an alternative without using the DEC technique. The proposed addition-only DEC alleviates the ADC’s incomplete settling errors, hence improving conversion rate while maintaining accuracy. It is based on a binary bridged SAR architecture with 4 redundant capacitors and conversion cycles, which ensure the ADC’s linearity of 10 bit within a 5 bit accuracy’s settling time. The proposed SAR keeps the same straightforward timing diagram as that in a conventional SAR ADC, incurring no offset to the ADC. Measurement results of 15 columns of SAR ADCs, sampling at 5 MS/s on the same CMOS image sensor (CIS) chip, show integral nonlinearity (INL) around 3 LSB (1LSB = 1mV), when sampling at 5 MHz, after a proposed swift digital background calibration that incurs no additional hardware complexity. The CIS array read out by the proposed column-level SAR ADCs is measured reasonable photoelectron transfer characteristics.

8. Temperature Sensors Incorporated into a CMOS Image Sensor with Column Zoom ADCs
   Shuang Xie; Xiaoliang Ge; Albert Theuwissen;
   In 2019 IEEE International Symposium on Circuits and Systems (ISCAS),
   IEEE, May 2019. DOI: 10.1109/iscas.2019.8702321
   
   Abstract: ...

   This paper proposes an array of nMOS based temperature sensors incorporated into a CMOS image sensor (CIS) for thermal compensation of the latter. Each temperature sensor features the same area as that of an image pixel. Both the temperature and the image sensors' outputs are read out by the column-level zoom ADCs, each of which offers 16 bits, with a 4-bit unit capacitor array (UCA) SAR and a 13-bit 2 nd -order incremental delta-sigma ADC (DSADC) as the first and the second stage, respectively. The proposed UCA with improved switching and decoding technique minimizes capacitor area and switching energy, by 50% and 75%, respectively, compared to a conventional binary weight array (BWA) counterpart. The column zoom ADC samples twice as fast while keeping its linearity, or, expands the dynamic range by 15 dB, for the image sensors, compared to a DSADC only alternative. To digitize the temperature sensor, the proposed zoom ADC is capable of quantization errors less than 16 μV, which is equivalent to a 0.125 °C resolution for a 130 μV/°C temperature coefficient. The proposed temperature sensor is simulated to keep its errors within ±0.21 °C upon 2 nd -order curve fitting, with 3 sigma Monte Carlo inaccuracies less than ±0.74 °C, between 0 and 100 °C, at a power and an area of 144 μW and 121 μm 2 , respectively, with a sampling period of 64 μs.

9. A CMOS Image Sensor with Improved Readout Speed using Column SAR ADC with Digital Error Correction
   Shuang Xie; Albert Theuwissen;
   In 2019 IEEE International Symposium on Circuits and Systems (ISCAS),
   IEEE, May 2019. DOI: 10.1109/iscas.2019.8702292
   
   Abstract: ...

   This paper proposes a CMOS image sensor (CIS) whose readout speed is improved by 33%, through applying a digital error correction (DEC) method to its column-level successive approximation register (SAR) analog to digital converters (ADC), compared to an alternative without using the DEC technique. The proposed addition-only DEC alleviates the ADC's incomplete settling errors, hence improving conversion rate while maintaining accuracy. It is based on a binary bridged SAR architecture with 4 redundant capacitors and conversion cycles, which ensure the ADC's linearity of 10 bit within a 5 bit accuracy's settling time. Simulation results show the DEC method improves the ADC's static and dynamic linearity, eliminating its missing codes and increasing its signal to noise plus distortion ratio (SNDR) from 64.5 dB to 67.5 dB, when operating at the same sampling speed. The proposed SAR keeps the same straightforward timing diagram as that in a conventional SAR ADC, incurring no offset to the ADC, while increasing the sampling rate by 33%. The simulated linearity of the prototype CIS is within ±0.07%, when sampled at a column readout rate of 10 MHz.

10. A CMOS Image Sensor with In-Pixel Temperature Sensors for Dark Signal Non-Uniformity Compensation
    Shuang Xie; Accel Abarca Prouza; Albert Theuwissen;
    In 2019 International Image Sensor Workshop (IISW),
    June 2019.
    
    Abstract: ...

    This paper presents a CMOS image sensor with in-pixel temperature sensors, for dark signal non-uniformity (DSNU) compensation between -20 ⁰C and 80 ⁰C. Two types of in-pixel temperature sensors, either based on a BJT or on the in-pixel source follower (SF) itself, are implemented, measured and compared, both implemented inside a 64×64 CIS array fabricated using 0.18 μm technology. Both temperature sensors achieve inaccuracies less than ±0.3 ⁰C, between -20 ⁰C and 80 ⁰C, when measured on 3 test chips. Dark current measured on the neighboring image pixels of the two types of temperature sensors show that the SF based one incurs no penalty to the image sensor array, while the BJT based alternative can introduce 100 times more dark current to its surrounding pixels. Using the temperature information provided by the in-pixel temperature sensors, the average dark current can be predicted and compensated by at least 70 %, on 3 measured chips.

11. 10b 1MS/s column parallel SAR ADC for high speed CMOS image sensors with offset compensation technique using analog summation method
    Jaekyum Lee; Albert Theuwissen;
    In Scientific CMOS Image Sensors Workshop,
    Toulouse, November 2019.

12. Deep Trench Isolation is Here to Stay
    Albert Theuwissen;
    October 2019. invited talk a 73rd Heidelberger Bildverarbeitungsforum, Stuttgart.

13. A 0.5e-rms temporal noise CMOS image sensor with Gm-Cell-Based pixel and period-controlled variable conversion gain
    X. Ge; A.J.P. Theuwissen;
    IEEE transactions on electron devices,
    Volume 64, Issue 12, pp. 5019-5026, October 2017. DOI: 10.1109/TED.2017.2759787
    
    Abstract: ...

    A deep subelectron temporal noise CMOS image sensor (CIS) with a Gm-cell based pixel and a correlated-double charge-domain sampling technique has been developed for photon-starved imaging applications. With the proposed technique, the CIS, which is implemented in a standard 0.18-µm CIS process, features pixel level amplification and achieves an input-referred noise of 0.5 e−rms with a correlated double sampling period of 5 µs and a row read-out time of 10 µs. The proposed structure also realizes a variable conversion gain (CG) with a period controlled method. This enables the read-out path CG and the noise-equivalent number of electrons to be programmable according to the application without any change in hardware. The experiments show that the measured CG can be tuned from 50 µV/e- to 1.6 mV/e- with a charging period from 100 ns to 4 µs. The measured characteristics of the prototype CIS are in a good agreement with expectations, demonstrating the effectiveness of the proposed techniques.
    
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14. Photon-counting image sensors
    E.R. Fossum; N. Teranishi; A. Theuwissen; D. Stoppa; E. Charbon;
    E.R. Fossum; N. Teranishi; A. Theuwissen; D. Stoppa; E. Charbon (Ed.);
    MDPI, , May 2017. ISBN 978-3-03842-374-4.

15. Analysis and calibration of process variations for an array of temperature sensors
    S. Xie; A. Abarca; J. Markenhof; A. Theuwissen;
    conference, November 2017.
    
    Abstract: ...

    This paper presents an analysis and calibration of process variations for an array of temperature sensors, which are incorporated into a CMOS image sensor chip. Making use of the experimental results of more than 500 temperature sensors implemented on the same chip, the proposed calibration method has removed their process variations from 14.3 % to 2.5 % (3 sigma).

16. Temperature sensors integrated into a CMOS image sensor
    A. Abarca; S. Xie; J. Markenhof; A. Theuwissen;
    In Proceedings of Eurosensors,
    Eurosensors, pp. 358-361, September 2017. DOI: 10.3390/proceedings1040358
    
    Abstract: ...

    In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is needed. The test image sensor consists of pixels and temperature sensors pixels (=Tixels). The size of the Tixels is 11 μm × 11 μm. Pixels and Tixels are placed next to each other in the active imaging array and use the same readout circuits. The design and the first measurements of the combined image-temperature sensor are presented.
    
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17. A 0.5e- temporal noise CMOS image sensor with charge-domain CDS and period-controlled variable conversion gain
    X Ge; A Theuwissen;
    In International image sensor workshop,
    pp. 290-293, June 2017.
    
    Abstract: ...

    This paper introduces a proof-of-concept low-noise CMOS image sensor (CIS) intended for photon-starved imaging applications. The proposed architecture is based on a charge-sampling pixel featuring in-pixel amplification to reduce its input referred noise. With the proposed technique, the structure realizes a period-controlled variable conversion factor at pixel-level. This enables the conversion factor and the noise-equivalent number of electrons to be tunable according to the application without any change in hardware. The obtained noise performance is comparable to the state-of-the-art low noise CIS, while this work employs a simpler circuit, without suffering from dynamic range limitations. The device is fabricated in a low-cost, standard CIS process.
    
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18. A highly linear CMOS image sensor with digitally assisted linearity calibration method
    F. Wang; L. Han; A. Theuwissen;
    In International image sensor workshop,
    pp. 336-339, June 2017.
    
    Abstract: ...

    A highly linear CMOS image sensor designed in 0.18μm CMOS image sensor (CIS) technology is presented in this paper. A new type of pixel design is adopted to cancel off the nonlinearity of the source follower (SF) and hence enhance the linearity. Furthermore, a digitally assisted calibration method is proposed to improve the linearity of the image sensor. The measurement results show that the new type of pixel can achieve better linearity performance comparing with the typical 4T pixel. With the calibration, the linearity of all types of pixels have been improved.
    
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19. Linearity analysis of a CMOS image sensor
    F Wang; A Theuwissen;
    In Electronic Imaging,
    Electronic Imaging, Electronic Imaging, 2017. DOI: https://doi.org/10.2352/ISSN.2470-1173.2017.11.IMS
    
    Abstract: ...

    In this paper, we analyze the causes of the nonlinearity of a voltage-mode CMOS image sensor, including a theoretical derivation and a numerical simulation. A prototype chip designed in a 0.18 μm 1-poly 4-metal CMOS process technology is implemented to verify this analysis. The pixel array is 160 × 80 with a pitch of 15 μm, and it contains dozens of groups of pixels that have different design parameters. From the measurement results, we confirmed these factors affecting the linearity and can give guidance for a future design to realize a high linearity CMOS image sensor.
    
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20. CMOS image sensors: Masterpieces of 3D integration
    A Theuwissen;
    Invited talk at Schleswig-Holsteinischen Bildverarbeitungstagen, Germany, June 2017.

21. Recent developments in CMOS image sensors
    A Theuwissen;
    Invited talk at 2nd EMVA forum, Austria, September 2017.

22. A charge transfer model for CMOS image sensors
    H. Liqiang; S. Yao; A.J.P. Theuwissen;
    IEEE Transactions on Electron Devices,
    Volume 63, Issue 1, pp. 32-41, 2016.

23. Introduction to the special issue on solid-state sensors
    A.J.P. Theuwissen;
    IEEE Transactions on Electron Devices,
    Volume 63, Issue 1, pp. 5-9, 2016.

24. A potential-based characterization of the transfer gate in CMOS image sensors
    Y. Xu; X. Ge; A.J.P. Theuwissen;
    IEEE Transactions on Electron Devices,
    Volume 63, Issue 1, pp. 42-48, 2016.

25. A CMOS image sensor with nearly unity-gain source follower and optimized column amplifier
    X. Ge; A. Theuwissen;
    In E. Fontana; C. Ruiz-Zamarreno (Ed.), 2016 IEEE SENSORS,
    IEEE, pp. 1-3, 2016. DOI: 10.1109/ICSENS.2016.7808589
    
    Abstract: ...

    This paper presents a CMOS image sensor with in-pixel nearly unity-gain pMOS transistor based source followers and optimized column-parallel amplifiers. The prototype sensor has been fabricated in a 0.18 μm CMOS process. By eliminating the body effect of the source follower transistor, the voltage gain for the pixel-level readout circuitry approaches unity. The use of a single-ended common-source cascode amplifier with ground rail regulation improves the PSRR of the column-parallel analog front-end circuitry and further the noise performance. Electrical characterization results show that the proposed pixel improves the conversion gain after the in-pixel source follower by 42% compared to that of the conventional structure. The prototype sensor with proposed readout architecture reaches a 1.1e- input-referred temporal noise with a column-level ×16 analog gain.
    
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26. A comparative noise analysis and measurement for n-type and p-type pixels with CMS technique
    X. Ge; B. Mamdy; A.J.P. Theuwissen;
    In A. Darmont; R. Widenhorn (Ed.), IS&T International Symposium on Electronic Imaging,
    Society for Imaging Science and Technology, pp. IMSE-261, 2016.

27. CMOS image sensor: Masterpieces of 3D integration
    A. Theuwissen;
    IEEE-DL invited talk at the University of Leuven, Belgium, November 2016.

28. Noise: You love it or you hate it
    A. Theuwissen;
    Invited talk at the University of Varna, Bulgaria, October 2016.

29. A Two Conversions/Sample Differential Slope Multiple Sampling ADC With Accelerated Counter Architecture
    K. Kitamura; A.J.P. Theuwissen;
    In P Magnan (Ed.), Proceedings of the International Image Sensor Workshop,
    International Image Sensor Society, pp. 417-420, 2015.

30. Investigating transfer gate potential barrier by feed-forward effect measurement
    Y. Xu; X. Ge; A.J.P. Theuwissen;
    In P. Magnan (Ed.), Proceedings of the International Image Sensor Workshop,
    International Image Sensor Society, pp. 116-120, 2015.

31. A miniaturized micro-digital sun sensor by means of low-power low-noise CMOS imager
    N. Xie; A.J.P. Theuwissen;
    IEEE Sensors Journal,
    Volume 14, Issue 1, pp. 96-103, 2014.

32. Integrated polarization analyzing CMOS image sensors for detection and signal processing
    M. Sarkar; A.J.P. Theuwissen;
    S. Nihtianov; A Luque (Ed.);
    Woodhead Publishing Limited, , 2014. Book title : Integrated polarization analyzing CMOS image sensors for detection and signal processing.

33. CMOS Image Sensors
    Albert Theuwissen;
    G. Meijer, M. Pertijs; K. Makinwa (Ed.);
    John Wiley \& Sons, , pp. 173-189, 2014. Book title : Smart Sensor Systems : Emerging Technologies and Applications.

34. Biologically inspired CMOS image sensor for fast motion and polarization detection
    M. Sarkar; D.S.S. Bello; C. van Hoof; A.J.P. Theuwissen;
    IEEE Sensors Journal,
    Volume 13, Issue 3, pp. 1065-1073, 2013. Harvest Article number: 6381431.

35. Low-power high-accuracy micro-digital sun sensor by means of a CMOS image sensor
    N. Xie; A.J.P. Theuwissen;
    Journal of Electronic Imaging,
    Volume 22, Issue 3, pp. 1-11, 2013.

36. Feedforward effect in standard CMOS pinned photodiodes
    M. Sarkar; B. Buttgen; A.J.P. Theuwissen;
    IEEE Transactions on Electron Devices,
    Volume 60, Issue 3, pp. 1154-1161, 2013. Harvest Article number: 6420923.

37. Column-parallel digital correlated multiple sampling for low-noise CMOS image sensors
    Y. Chen; Y. Xu; A.J. Mierop; A.J.P. Theuwissen;
    IEEE Sensors Journal,
    Volume 12, Issue 4, pp. 793-799, 2012.

38. An autonomous microdigital sun sensor by a CMOS imager in space application
    N. Xie; A.J.P. Theuwissen;
    IEEE Transactions on Electron Devices,
    Volume 59, Issue 12, pp. 3405-3410, 2012. Harvest.

39. Analyzing the radiation degradation of 4-transistor deep submicron technology CMOS image sensors
    J. Tan; B. Buttgen; A.J.P. Theuwissen;
    IEEE Sensors Journal,
    Volume 12, Issue 6, pp. 2278-2286, 2012. Harvest Article number: 6143978.

40. A 0.7 e- rms temporal-readout-noise CMOS image sensor for low-light-level imaging
    Y. Chen; Y. Xu; Y. Chae; A. Mierop; X. Wang; A.J.P. Theuwissen;
    In H Hidaka; {Nauta et al}, B (Ed.), Digest of Technical Papers - 2012 IEEE International Solid-State Circuits Conference.,
    IEEE, pp. 384-386, 2012.

41. Charge Domain Interlace Scan Implementation in a CMOS Image Sensor
    Y. Xu; A.J. Mierop; A.J.P. Theuwissen;
    IEEE Journal on Sensors,
    pp. 2621-2627, 2011.

42. Integrated Polarization-Analyzing CMOS Image Sensor for Detecting Incoming Light Ray Direction
    M. Sarkar; D. San Segundo Bello; C. van Hoof; A.J.P. Theuwissen;
    IEEE Transactions on Instrumentation and Measurement,
    Volume 60, Issue 8, pp. 2759-2767, 2011.

43. Charge Domain Interlace Scan Implementation in a CMOS Image Sensor
    Y. Xu; A. Mierop; A.J.P. Theuwissen;
    IEE Conference Publication Series,
    Volume 11, Issue 11, pp. 2621-2627, 2011.

44. Integrated Polarization Analyzing CMOS Image Sensor for Real Time Material Classification
    M. Sarkar; D. San Segundo Bello; C. van Hoof; A.J.P. Theuwissen;
    IEEE Sensors Journal,
    Volume 11, Issue 8, pp. 1692-1703, 2011.

45. Column-Parallel Single Slope ADC with Digital Correlated Multiple Sampling for Low Noise CMOS Image Sensors
    Y. Chen; A.J.P. Theuwissen; Y. Chae;
    In Procedia Engineering (Proceedings of the 25th Eurosensors Conference,
    pp. 1265-1268, 2011.

46. Ageing effects on image sensors due to terrestrial cosmic radiation
    G.G. Nampoothiri; A.J.P. Theuwissen; M. Horemans;
    In S Süsstrunk; M Rabbani (Ed.), Electonic Imaging,
    SPIE, pp. 1-5, 2011.

47. Ageing Effects on Image Sensors: Neutron Irradation Studies on Wafer and Packages CCD and CMOS devices
    G.G. Nampoothiri; A.J.P. Theuwissen;
    In K Chesnut; R Reed (Ed.), Proceedings of Nuclear and Space Radiation Effects Conference 2011,
    IEEE, pp. -, 2011.

48. An autonomous low power high resolution micro-digital sun sensor
    N. Xie; A.J.P. Theuwissen;
    In L Zhou; G Jin (Ed.), 2011 International Symposium on Photoelectric Detection and Imaging (ISPDI2011),
    SPIE, pp. 1-8, 2011.

49. Column-Parallel Circuits with Digital Correlated Multiple Sampling for Low Noise CMOS Imagers
    Y. Chen; Y. Xu; A. Mierop; A.J.P. Theuwissen;
    In N Terashini; J Nakamura (Ed.), 2011 International Image Sensor Workshop (IISW),
    Image Sensors, pp. 78-81, 2011.

50. Ageing Effects on Image Sensors: Neutron Irradiation Studies on Wafer and Packaged devices
    G.G. Nampoothiri; A.J.P. Theuwissen;
    In N Teranishi; J Nakamura; S Kawahito (Ed.), 2011 International Image Sensor Workshop (IISW),
    IISW, pp. 66-69, 2011.

51. 4T CMOS Image Sensor Pixel Degradation due to X-ray Radiation
    J. Tan; B. Buettgen; A.J.P. Theuwissen;
    In N Terashini; J Nakamura (Ed.), 2011 International Image Sensor Workshop - IISW,
    Image Sensors, pp. 228-231, 2011.

52. An Autonomous micro-Digital Sun Sensor Implemented with a CMOS Image Sensor Achieving 0.004o Resolution @ 21 mW
    N. Xie; A.J.P. Theuwissen; B. Buttgen;
    In N Teranishi; J Nakamura; S Kawahito (Ed.), International Image Sensor Workshop (IISW 2011),
    IISW, pp. 208-211, 2011.

53. X-ray radiation effect on CMOS imagers with in-pixel buried-channel source follower
    Y. Chen; J. Tan; X. Wang; A.J. Mierop; A.J.P. Theuwissen;
    In H Tenhunen; M Aberg (Ed.), 41st IEEE European Solid-State Device Research Conference (ESSDERC) 2011,
    IEEE, pp. 155-158, 2011.

54. Single slope analog-to-digital converter
    M.F. Snoeij; A.J.P. Theuwissen; J.H. Huijsing;
    2011.

55. The APS+ and why we dare going without DARE
    J. Leijtens; N. Xie; A.J.P. Theuwissen;
    In {Bedi et al}, R (Ed.), Proceedings of 3rd International workshop on Analog and Mixed signal Integrated Circuits for Space Applications (AMICSA 2010),
    ESA, pp. 1-18, 2010.

56. X-ray radiation effects on CMOS image sensor in-pixel devices
    J. Tan; B. Buttgen; A.J.P. Theuwissen;
    In s.n. (Ed.), Proceedings of International conference on solid-state devices and materials 2010,
    pp. 299-300, 2010.

57. In-pixel buried-channel source follower in CMOS image sensors exposed to X-ray radiation
    C. Yue; J. Tan; X. Wang; A. Mierop; A.J.P. Theuwissen;
    In s.n. (Ed.), Proceedings of IEEE sensors 2010,
    IEEE, pp. 1649-1652, 2010.

58. Biologically inspired autonomous agent navigation using an integrated polarization analyzing CMOS image sensor
    M. Sarkar; D. San Segundo Bello; C. van Hoof; A.J.P. Theuwissen;
    In B Jakoby; M.J. Vellekoop (Ed.), Proceedings EUROSENSOR XXIV Conference 2010,
    Elsevier, pp. 673-676, 2010.

59. Integrated polarization-analyzing CMOS image sensor for detecting incoming light ray direction
    M. Sarkar; D. San Segundo Bello; C. van Hoof; A.J.P. Theuwissen;
    In S Mandayam; K Arshak (Ed.), Proceedings of 2010 IEEE Sensors Applications Symposium,
    IEEE, pp. 194-199, 2010.

60. Total ionizing effects on 4-transistor CMOS image sensor pixels
    J. Tan; A.J.P. Theuwissen;
    In JB Xu; PKT Mok (Ed.), Proceedings of IEEE International conference on Electron Devices and Solid-State Circuits (EDSSC'10),
    IEEE, pp. 1-4, 2010.

61. A biologically inspired collision detection algorithm using differential optic flow imaging
    M. Sarkar; D. San Segundo Bello; C. van Hoof; A.J.P. Theuwissen;
    In TG Constandinou (Ed.), Proceedings of IEEE BIOCAS 2010,
    IEEE, pp. 250-253, 2010.

62. A CMOS image sensor with charge domain interlace scan
    Y. Xu; A. Mierop; A.J.P. Theuwissen;
    In T Kenny; G Fedder (Ed.), Proceedings of IEEE Sensors 2010,
    IEEE, pp. 123-127, 2010.

63. The APS+ : an intelligent active pixel sensor centered on low power
    N. Xie; A.J.P. Theuwissen; B. Buettgen; H. Hakkesteegt; H. Jansen; J. Leijtens;
    In {Armandillo et al}, E (Ed.), Proceedings of International Conference on Space Optics (ICSO 2010),
    ESA, pp. 1-4, 2010.

64. Now is the time for the sunsensor of the future
    J. Leijtens; K. de Boom; M. Durkut; H. Hakkesteegt; A.J.P. Theuwissen; N. Xie;
    In {Armandillo et al.}, E (Ed.), Proceedings of the 2010 International Conference on Space Optics,
    ESA/ESTEC, pp. 1-6, 2010. CD-ROM.

65. Integrated polarization analyzing CMOS image sensor for autonomous navigation using polarized light
    M. Sarkar; D. San Segundo Bello; C. van Hoof; A.J.P. Theuwissen;
    In P Chountas; J Kacprzyk (Ed.), Proceedings of the 2010 5th IEEE Conference on Intelligent Systems,
    IEEE, pp. 224-229, 2010.

66. Radiation effects on CMOS image sensors due to X-rays
    J. Tan; B. Buttgen; A.J.P. Theuwissen;
    In J Breza; D Donoval; E Vavrinsky (Ed.), Proceedings 8th International conference on Advanced Semiconductor Devices and Microsystems (ASDAM),
    IEEE, pp. 279-283, 2010.

67. An analog and digital representation of polarization using CMOS image sensors
    M. Sarkar; D. San Segundo Bello; C. van Hoof; A.J.P. Theuwissen;
    In s.n. (Ed.), Proceedings 5th EOS Topical Meeting on Advanced Imaging Techniques,
    s.n., pp. 1-2, 2010.

68. Micro-digital sun sensor: an imagining sensor for space applications
    N. Xie; A.J.P. Theuwissen; B. Buettgen; H. Hakkesteegt; H. Jansen; J. Leijtens;
    In s.n. (Ed.), Proceedings of IEEE International symposium on industrial electronics,
    IEEE, pp. 3362-3365, 2010.

69. Integrated polarization analyzing CMOS image sensor
    M. Sarkar; D. San Segundo Bello; C. van Hoof; A.J.P. Theuwissen;
    In {Amara et al.}, A (Ed.), Proceedings of 2010 IEEE International Symposium on Circuits and Systems,
    IEEE, pp. 621-624, 2010.

70. Better pictures through physics: the state of art of CMOS image sensors
    A.J.P. Theuwissen;
    2010.

71. Sensors getting worse, images getting better
    A.J.P. Theuwissen;
    2010.

72. A CMOS image sensor with in pixel buried channel source follower and optimized row selector
    C. Yue; X. Wang; A. Mierop; A.J.P. Theuwissen;
    pp. 2390-2397, 2009.

73. On-Chip Pixel Binning in Photon-Counting EMCCD-Based Gamma Camera: A Powerful Tool for Noise Reduction
    A.H. Westra; J.W.T. Heemskerk; M.A.N. Korevaar; A.J.P. Theuwissen; R. Kreuger; K.M. Ligtvoet; F.J. Beekman;
    IEEE Transactions on Nuclear Science,
    Volume 56, pp. 2559-2565, 2009.

74. Characterization of in pixel buried channel source follower with optimized row selector in CMOS image sensors
    Y. Chen; X. Wang; A. Mierop; A.J.P. Theuwissen;
    s.n. (Ed.);
    International Image Sensor Workshop, , pp. 0-4, 2009.

75. Investigating the ageing effects on image sensors due to terrestrial cosmic radiation
    G. Nampoothiri; A.J.P. Theuwissen;
    s.n. (Ed.);
    International Image Sensor Workshop, , pp. 01-04, 2009.

76. Degradation of CMOS image sensors in deep-submicron technology due to gamma-radiation
    Rao padmakumar; X. Wang; A.J.P. Theuwissen;
    Solid-State Electronics,
    Volume 52, pp. 1407-1413, 2008.

77. Influence of terrestrial cosmic rays on the reliability of CCD image sensors-pat 2:experiments at elevated temperature
    A.J.P. Theuwissen;
    IEEE Transactions on Electron Devices,
    Volume 55, Issue 9, pp. 2324-2328, 2008.

78. CMOS image sensors:state-of-the-art
    A.J.P. Theuwissen;
    Solid-State Electronics,
    Volume 52, pp. 1401-1406, 2008.

79. CCD structures implemented in standard 0.18 micrometer CMOS technology
    Rao padmakumar; X. Wang; A.J.P. Theuwissen;
    Electronics Letters,
    Volume 44, Issue 8, pp. 548-549, 2008.

80. Negative offset operation of four-transistor CMOS image pixels for increased well capacity and suppressed dark current
    B. Mheen; Y. Joo-song; A.J.P. Theuwissen;
    IEEE Electron Device Letters,
    Volume 29, Issue 4, pp. 347-349, 2008.

81. A CMOS image sensor with a buried-channel source follower
    X. Wang; M.F. Snoeij; R. Padma kumar rao; A. Mierop; A.J.P. Theuwissen;
    In s.n. (Ed.), Proceedings of ISSCC 2008,
    IEEE, pp. 62-63, 2008.

82. A CMOS image sensor with row and column profiling means
    N. Xie; A.J.P. Theuwissen; X. Wang; J. Leijtens; H. Hakkesteegt; H. Jansen;
    In s.n. (Ed.), Proceedings of IEEE Sensors 2008,
    IEEE Sensors, pp. 1356-1359, 2008.

83. Multiple-ramp column-parallel ADC architectures for CMOS image sensors
    M.F. Snoeij; A.J.P. Theuwissen; K.A.A. Makinwa; J.H. Huijsing;
    IEEE Journal of Solid State Circuits,
    Volume 42, Issue 12, pp. 2968-2977, 2007.

84. Technical Challenges and Recent progress in CCD Imagers
    J.T. Bosiers; C. Draijer; A.J.P. Theuwissen;
    Nuclear Instruments & Methods in Physics Research. Section A: Accelerators, Spectrometers, Detectors, and Associated Equipment,
    pp. 148-156, 2007.

85. Gamma-ray effects on CMOS image sensors in deep sub-micron technology
    Rao padmakumar; X. Wang; A. Mierop; A.J.P. Theuwissen;
    s.n. (Ed.);
    International Image sensor, , pp. 70-73, 2007.

86. A CMOS image sensor with a column-level multiple-ramp single-slope ADC
    M.F. Snoeij; P. Donegan; A.J.P. Theuwissen; K.A.A. Makinwa; J.H. Huijsing;
    In s.n. (Ed.), Solid-State Circuits Conference, 2007. ISSCC 2007. Digest of Technical Papers. IEEE International,
    IEEE, pp. 1-4, 2007.

87. Characterization of a buried-channel n-MOST source followers in CMOS image sensors
    X. Wang; Rao padmakumar; A.J.P. Theuwissen;
    In s.n. (Ed.), Proceedings of the 2007 International Image Sensor Workshop,
    ImageSensors Inc., pp. 223-245, 2007.

88. Degradation of spectral response and dark current of CMOS image sensor in deep-submicron technology due to gamma-irradiation
    Rao padmakumar; X. Wang; A.J.P. Theuwissen;
    In s.n. (Ed.), ESSDERC 2007 Proceedings of the 37th European Solid-State Device Research Conference,
    IEEE, pp. 370-373, 2007.

89. Power and Area Efficient Column-Parallel ADC Architectures for CMOS Image Sensors
    M.F. Snoeij; A.J.P. Theuwissen; J.H. Huijsing; K.A.A. Makinwa;
    In s.n. (Ed.), Proceedings IEEE Sensors 2007,
    IEEE, pp. 523-526, 2007.

90. The Hole Role in Solid-State Imagers
    A.J.P. Theuwissen;
    pp. 2972-2980, 2006.

91. A CMOS Imager With Column-Level ADC Using Dynamic column Fixed-pattern Noise Reduction (U-SP-2-I-ICT)
    M.F. Snoeij; A.J.P. Theuwissen; K.A.A. Makinwa; J.H. Huijsing;
    IEEE Journal of Solid State Circuits,
    Volume 41, Issue 12, pp. 3007-3015, 2006.

92. A CMOS Imager with Column-Level ADC Using Dynamic Column FPN Reduction (U-SP-2-I-ICT)
    M.F. Snoeij; A.J.P. Theuwissen; K.A.A. Makinwa; J.H. Huijsing;
    s.n. (Ed.);
    s.l., , pp. 498-499, 2006.

93. "Smart FPA's : Are They Worth the Effort?" (U-SP-2-I-ICT)
    J. Leijtens; A.J.P. Theuwissen; J.P. Magnan;
    s.n. (Ed.);
    SPIE, , pp. 1-5, 2006.

94. A CMOS Imager with column-level ADC using dynamic column FPN reduction (U-SP-2-I-ICT)
    M.F. Snoeij; A.J.P. Theuwissen; K.A.A. Makinwa; J.H. Huijsing;
    s.n. (Ed.);
    s.l., , pp. 2014-2023, 2006.

95. Column-parallel single-slope ADCS for CMOS image sensors (U-SP-2-I-ICT)
    M.F. Snoeij; A.J.P. Theuwissen; K.A.A. Makinwa; J.H. Huijsing;
    s.n. (Ed.);
    Eurosensors, , pp. 1-4, 2006.

96. CMOS Image Sensors for Ambient Intelligence (U-SP-2-I-ICT)
    A.J.P. Theuwissen; M.F. Snoeij; X. Wang; R. Padma kumar rao; E. Bodegom;
    {S. Mukherjee} (Ed.);
    Springer, , pp. 125-150, 2006.

97. "Influence of Terrestrial Cosmic rays on Solid-state Image Sensors" (U-SP-2-I-ICT)
    A.J.P. Theuwissen;
    In Spektrum Forum,
    Fachhochschule, pp. -, 2006.

98. "Fixed-pattern Noise induced by Transmission Gate in Pinned 4T CMOS Image Sensor Pixels" (U-SP-2-I-ICT)
    X. Wang; Rao padmakumar; A.J.P. Theuwissen;
    In s.n. (Ed.), Proceedings of the 38th European solid-state device research conference (ESSDERC),
    ESSDERC, pp. 331-334, 2006.

99. "Column-parallel Single Slope ADCs for CMOS Image Sensors" (U-SP-2-I-ICT)
    M.F. Snoeij; A.J.P. Theuwissen; K.A.A. Makinwa; J.H. Huijsing;
    In s.n. (Ed.), Eurosensors XX 2006,
    Eurosensors, pp. 284-287, 2006.

100. "Random Telegraph Signal in CMOS Image Sensor Pixels" (U-SP-2-I-ICT)
     X. Wang; Rao padmakumar; A. Mierop; A.J.P. Theuwissen;
     In s.n. (Ed.), Proceedings of the Electron Devices Meeting, 2006. IEDM '06. International,
     IEEE, pp. 115-118, 2006.

101. A 1.8 V 3.2 /spl mu/W comparator for use in a CMOS imager column-level single-slope ADC
     M.F. Snoeij; A.J.P. Theuwissen; J.H. Huijsing;
     In s.n. (Ed.), ISCAS 2005, IEEE International Symposium on Circuits and Systems, 2005,
     IEEE, pp. 6162-6165, 2005. Editor onbekend, WPM.

102. The effect of switched biasing on 1/f noise in CMOS imager front-ends
     M.F. Snoeij; A.J.P. Theuwissen; J.H. Huijsing;
     In s.n. (Ed.), Proceedings of the 2005 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors,
     s.n., pp. 68-71, 2005. Editor onbekend, WPM.

103. A low-power column-parallel 12-bit ADC for CMOS imagers
     M.F. Snoeij; A.J.P. Theuwissen; J.H. Huijsing;
     In s.n. (Ed.), Proceedings of the 2005 IEEE Workshop on Charge-Coupled Devices and Advanced Image Sensors,
     s.n., pp. 169-172, 2005. Editor onbekend, WPM.

104. Research overview of 'Solid-state image sensors in deep sub-micron CMOS technology
     X. Wang; A.J.P. Theuwissen;
     Delft University of Technology, Volume STW-project 5869 , 2004.

105. Study, modelling and charactirization of silicon surface, interface and bulk effects on the response of a CMOS image sensor in 0.18-micrometer technology
     P. Ramachandra Rao; A.J.P. Theuwissen;
     Technologiestichting STW, Volume STW-project 5869 , 2004. nog niet eeder opgevoerd JH.

106. Leakage current modeling of test structures for characterization of dark current in CMOS image sensors
     N.V. Loukianova; H-O. Folkerts; J.P.V. Maas; D.W.E. Verbugt; A.J. Mierop; W. Hoekstra; E. Roks; A.J.P. Theuwissen;
     IEEE Transactions on Electron Devices,
     Volume 50, Issue 1, pp. 77-83, 2003.

107. An image sensor which captures 100 consecutive frames at 1 000 000 frames/s
     T. Goji Etoh; D. Poggemann; G. Kreider; H. Mutoh; A.J.P. Theuwissen; A. Ruckelshausen; Y. Kondo; H. Maruno; K Takubo; H Soya; K Takehara; T Okinaka; Y Takano;
     IEEE Transactions on Electron Devices,
     Volume 50, Issue 1, pp. 144-151, 2003.

108. A 35-mm format 11 M pixel full-frame CCD for professional digital still imaging
     J.T. Bosiers; B.G.M. Dillen; C. Draijer; A.C. Kleimann; F.J. Polderdijk; M. de Wolf; W. Klaassens; A.J.P. Theuwissen; H.L. Peek; H-O. Folkerts;
     IEEE Transactions on Electron Devices,
     Volume 50, Issue 1, pp. 254-265, 2003.

109. Simulation-based development and characterization of a CCD architecture for 1 million frames per second
     D. Poggemann; A. Ruckelshausen; T. Goji Etoh; A.J.P. Theuwissen; J.T. Bosiers; H. Mutoh; Y. Kondo;
     In MM Blouke; N Sampat; RJ Motta (Ed.), Proceedings of electronic imaging, science, and technology; sensors and camera systems for scientific, industrial, and digital photography applications IV,
     The Society for Imaging Science and Technology, pp. 185-195, 2003.

110. Adaptive pixel defect correction
     A.A. Tanbakuchi; A. van der Sijde; B. Dillen; A.J.P. Theuwissen; W. de Haan;
     In MM Blouke; N Sampat; RJ Motta (Ed.), Proceedings of electronic imaging, science and technology; sensors and camera systems for scientific, industrial, and digital photography applications IV,
     The Society for Imaging Science and Technology, pp. 360-370, 2003.

111. Ultra-high resolution image capturing and processing for digital cinematography
     A.J.P. Theuwissen; J. Coghill; L. Ion; F. Shu; H. Siefken; C. Smith;
     In s.n. (Ed.), ISSCC 2003 IEEE international solid-state circuits conference,
     IEEE, pp. 162-163, 2003.

112. Frame transfer CCDs for digital still cameras: concept, design, and evaluation
     J.T. Bosiers; A.C. Kleimann; H.C. van Kuijk; L. Le Cam; H.L. Peek; J.P. Maas; A.J.P. Theuwissen;
     IEEE Transactions on Electron Devices,
     Volume 49, Issue 3, pp. 377-386, 2002.

113. Read-out circuits for fixed-pattern noise reduction in a CMOS active pixel sensor
     M.F. Snoeij; A.J.P. Theuwissen; J.H. Huijsing;
     In Proceedings of SeSens 2002,
     STW Stichting voor de Technische Wetenschappen, pp. 676-676, 2002.

114. A CCD image sensor of 1Mframes/s for continuous image capturing 103 frames
     T. Goji Etoh; D. Poggemann; A. Ruckelshausen; A.J.P. Theuwissen; G. Kreider; H-O. Folkerts; H. Mutoh; Y. Kondo; H. Maruno; K Takubo; H Soya; K Takehara; T Okinaka; Y Takano; T Reisinger; C Lohmann;
     In JH. Wuorinen (Ed.), 2002 IEEE International solid-state circuits conference: 2002 Digest of technical papers,
     IEEE, pp. 46-47, 2002. plus page 433.

115. A 1/1.8" 3M pixel FT-CCD with on-chip horizontal sub-sampling for DSC applications
     L. Le Cam; J.T. Bosiers; A.C. Kleimann; H.C. van Kuijk; J.P. Maas; M.J. Beenhakkers; H.L. Peek; P.C. van de Rijt; A.J.P. Theuwissen;
     In JH. Wuorinen (Ed.), 2002 IEEE International solid-state circuits conference: 2002 Digest of technical papers,
     IEEE, pp. 34-35, 2002. plus page 442.

116. CCD or CMOS image sensors for consumer digital still photography?
     A.J.P. Theuwissen;
     In VLSI'2001: proceedings,
     IEEE, pp. 168-171, 2001.

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