MSc Biswas

PhD student
Electronic Components, Technology and Materials (ECTM), Department of Microelectronics

Biography

Shatavisha Biswas obtained her Bachelor's degree (B.Tech) from TMSL, India, in 2019,
with a major in Electronics and Communication Engineering In 2020, she commenced her Masters degree (MS by Research) in the Department of Electronics and Electrical Communication Engg. (E&ECE) at the Indian Institute of Technology (IIT) Kharagpur, India. Her master's dissertation was focused on the development of a MEMS-based micro-dosing system for intravenous therapy applications. At IIT Kharagpur, she worked on the research project entitled “Nanoengineered and Pain-free Drug Delivery Systems”, funded by the Department of Science and Technology (DST), the Ministry of Electronics & Information Technology (MeitY),
Government of India and Indian Council of Medical Research (ICMR), Government of India
She has experience in finite element analysis FEA simulations and micro and nanofabrication technologies.

As of January 2024, Shatavisha joined the ECTM group as a P hD researcher under Prof Sten
Vollebregt in the R PODID project at TU Delft . She aims on studying s park discharge and
nanoparticles generation with the overarching goal of the development of nanoparticles based sensing technologies

Publications

An Output Bandwidth Optimized 200-Gb/s PAM-4 100-Gb/s NRZ Transmitter With 5-Tap FFE in 28-nm CMOS
Wang, Z.; Choi, M.; Lee, K.; Park, K.; Liu, Z.; Biswas, A.; Han, J.; Du, S.; Alon, E.;
IEEE Journal of Solid-State Circuits,
Volume 57, Issue 1, pp. 21-31, 2022. DOI: 10.1109/JSSC.2021.3109562
A 200Gb/s PAM-4 Transmitter with Hybrid Sub-Sampling PLL in 28nm CMOS Technology
Wang, Z.; Choi, M.; Kwon, P.; Lee, K.; Yin, B.; Liu, Z.; Park, K.; Biswas, A.; Han, J.; Du, S.; Alon, E.;
In 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
pp. 34-35, 2022. DOI: 10.1109/VLSITechnologyandCir46769.2022.9830237

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Last updated: 25 Jan 2024