Leo de Vreede

Publications

A Single-Supply Balun-First Three-Way mm-Wave Doherty PA
Kumaran, Anil Kumar; Pashaeifar, Masoud; Alexanderson, Mats; de Vreede, Leonardus Cornelis Nicolaas; Alavi, Morteza S.;
IEEE Transactions on Microwave Theory and Techniques,
pp. 1-16, 2024. DOI: 10.1109/TMTT.2024.3365697

Keywords: ...
Inductors;Integrated circuit modeling;5G mobile communication;Capacitors;Bandwidth;Impedance;Peak to average power ratio;Compact;Doherty;lumped components;millimeter wave;Norton transformation;power amplifier (PA);three-stage.
32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor
Pashaeifar, Masoud; Kumaran, Anil K.; De Vreede, Leo C.N.; Alavi, Morteza S.;
In 2024 IEEE International Solid-State Circuits Conference (ISSCC),
pp. 532-534, 2024. DOI: 10.1109/ISSCC49657.2024.10454427

Keywords: ...
Time-frequency analysis;5G mobile communication;Transmitters;Linearity;Power amplifiers;Solid state circuits;Reliability.
A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
Y. Shen; M. Hoogelander; R. Bootsman; M. S. Alavi; L. C. N. de Vreede;
IEEE Journal Solid-State Circuits,
Volume 58, Issue 9, pp. 2489-2500, Sep. 2023. DOI: 10.1109/JSSC.2023.3279235
A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter
Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 58, Issue 3, pp. 677-690, 2023. DOI: 10.1109/JSSC.2022.3222028
A Wideband Digital-Intensive Current-Mode Transmitter Line-Up
Shen, Yiyu; Hoogelander, Martijn; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Journal of Solid-State Circuits,
pp. 1-12, 2023. DOI: 10.1109/JSSC.2023.3279235
An Inverted Doherty Power Amplifier Insensitive to Load Variation With an Embedded Impedance Sensor in Its Output Power-Combining Network
Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leonardus Cornelis Nicolaas;
IEEE Transactions on Microwave Theory and Techniques,
pp. 1-15, 2023. DOI: 10.1109/TMTT.2023.3277081
A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications
Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
IEEE Journal of Solid-State Circuits,
pp. 1-16, 2023. DOI: 10.1109/JSSC.2023.3267723
The Efficiency and Power Utilization of Current-Scaling Digital Transmitters
Mul, Dieuwert P. N.; Bootsman, Robert J.; Beikmirza, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
pp. 1-17, 2023. DOI: 10.1109/TMTT.2023.3336984

Keywords: ...
Switches;Radio frequency;Clocks;Logic gates;Transmitters;Power generation;Loading;Current mode;current scaling;digital transmitter (DTX);Doherty;efficiency;multiphase;peak-to-average-power ratio (PAPR);polar;power utilization;RF-DAC;signed Cartesian (SC);upconversion.
19.1 A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications
Montazerolghaem, Mohammad Ali; de Vreede, Leo C. N.; Babaie, Masoud;
In 2023 IEEE International Solid- State Circuits Conference (ISSCC),
pp. 292-294, 2023. DOI: 10.1109/ISSCC42615.2023.10067266
PA Output Power and Efficiency Enhancement Across the 2:1 VSWR Circle using Static Active Load Adjustment
Singh, Gagan Deep; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
pp. 211-214, 2023. DOI: 10.1109/IMS37964.2023.10188045

Keywords: ...
Loading;Power amplifiers;Couplers;Microwave theory and techniques;Microwave amplifiers;Power generation;Power Amplifier;VSWR;Coupler;Gallium Nitrite (GaN);HEMT.
A Low-Complexity Digital Predistortion Technique For Digital I/Q Transmitters
Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,
pp. 787-790, 2023. DOI: 10.1109/IMS37964.2023.10187914

Keywords: ...
Microwave measurement;Constellation diagram;Transmitters;Bandwidth;Microwave theory and techniques;Predistortion;Digital pre-distortion;DPD;constellation;mapping;digital transmitter;RF-DAC.
A 26GHz Balun-First Three-Way Doherty PA in 40nm CMOS with 20.7 dBm Psat and 20dB Power Gain
Kumaran, Anil Kumar; Pashaeifar, Masoud; Nemati, Hossein Mashad; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2023 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
pp. 189-192, 2023. DOI: 10.1109/RFIC54547.2023.10186161

Keywords: ...
Power measurement;5G mobile communication;Radio transmitters;Power amplifiers;Radiofrequency integrated circuits;Frequency measurement;Scattering parameters;Doherty;3-stage Power amplifier;Compact;Millimeter wave;Lumped components;Norton transformation.
A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies
Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
IEEE Journal of Solid-State Circuits,
Volume 57, Issue 3, pp. 803-817, 2022. DOI: 10.1109/JSSC.2021.3133861
A 23.8–30.4-GHz Vector-Modulated Phase Shifter With Two-Stage Current-Reused Variable-Gain Amplifiers Achieving 0.23° Minimum RMS Phase Error
Zhang, Linghan; Shen, Yiyu; de Vreede, Leo; Babaie, Masoud;
IEEE Solid-State Circuits Letters,
Volume 5, pp. 150-153, 2022. DOI: 10.1109/LSSC.2022.3179661
A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation
Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 57, Issue 10, pp. 2999-3013, 2022. DOI: 10.1109/JSSC.2022.3175685
Load-Modulation-Based IMD3 Cancellation for Millimeter-Wave Class-B CMOS Power Amplifiers Achieving EVM < 1.2%
Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Microwave and Wireless Components Letters,
Volume 32, Issue 6, pp. 716-719, 2022. DOI: 10.1109/LMWC.2022.3166257
High-Power Digital Transmitters for Wireless Infrastructure Applications (A Feasibility Study)
Bootsman, Robert J.; Mul, Dieuwert P. N.; Shen, Yiyu; Hashemi, Mohsen; Heeres, Rob M.; van Rijs, Fred; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 70, Issue 5, pp. 2835-2850, 2022. DOI: 10.1109/TMTT.2022.3153000
A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters
Shen, Yiyu; Bootsman, Robert; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Journal of Solid-State Circuits,
Volume 57, Issue 5, pp. 1446-1456, 2022. DOI: 10.1109/JSSC.2022.3144362
A Load Insensitive Doherty Power Amplifier with better than −39dBc ACLR on 2:1 VSWR Circle using a Constant 50 Ω Trained Pre-distorted Signal
Singh, Gagan Deep; Mul, Dieuwert; Nemati, Hossein Mashad; Alavi, Morteza S.; de Vreede, Leo C.N.;
In 2022 52nd European Microwave Conference (EuMC),
pp. 222-225, 2022. DOI: 10.23919/EuMC54642.2022.9924452
A 39 W Fully Digital Wideband Inverted Doherty Transmitter
Bootsman, Robert; Shen, Yiyu; Mul, Dieuwert; Rousstia, Mohadig; Heeres, Rob; van Rijs, Fred; Gajadharsing, John; Alavi, Morteza S.; de Vreede, Leo C.N.;
In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
pp. 979-982, 2022. DOI: 10.1109/IMS37962.2022.9865405
A Wideband Two-Way Digital Doherty Transmitter in 40nm CMOS
Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022,
pp. 975-978, 2022. DOI: 10.1109/IMS37962.2022.9865506
A Millimeter-Wave Front-End for FD/FDD Transceivers Featuring an Embedded PA and an N-Path Filter Based Circulator Receiver
Pashaeifar, Masoud; De Vreede, Leo C.N.; Alavi, Morteza S.;
In 2022 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
pp. 11-14, 2022. DOI: 10.1109/RFIC54546.2022.9863209
A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3
Montazerolghaem, M. A.; de Vreede, Leo C. N.; Babaie, Masoud;
In 2022 IEEE Custom Integrated Circuits Conference (CICC),
pp. 11-12, 2022. DOI: 10.1109/CICC53496.2022.9772854
A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency
Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2022 IEEE Custom Integrated Circuits Conference (CICC),
pp. 01-02, 2022. DOI: 10.1109/CICC53496.2022.9772797
Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters
Kumaran, Anil Kumar; Nemati, Hossein Mashad; De Vreede, Leo C.N.; Alavi, Morteza S.;
In 2022 IEEE International Symposium on Circuits and Systems (ISCAS),
pp. 438-442, 2022. DOI: 10.1109/ISCAS48785.2022.9937619
A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter
Beikmirza, Mohammadreza; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 56, Issue 12, pp. 3768-3783, 2021. DOI: 10.1109/JSSC.2021.3105542
A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications
Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 56, Issue 12, pp. 3784-3798, 2021. DOI: 10.1109/JSSC.2021.3111126
14.4 A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays
Pashaeifar, Masoud; de Vreede, Leo C. N.; Alavi, Morteza S.;
In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
pp. 223-225, 2021. DOI: 10.1109/ISSCC42613.2021.9365776
6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band
Beikmirza, Mohammadreza; Shen, Yiyu; Mehrpoo, Mohammadreza; Hashemi, Mohsen; Mul, Dieuwert; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
pp. 92-94, 2021. DOI: 10.1109/ISSCC42613.2021.9365831
6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications
Montazerolghaem, Mohammad Ali; Pires, Sergio; de Vreede, Leo C.N.; Babaie, Masoud;
In 2021 IEEE International Solid- State Circuits Conference (ISSCC),
pp. 98-100, 2021. DOI: 10.1109/ISSCC42613.2021.9365849
Efficiency and Linearity of Digital "Class-C Like" Transmitters
Mul, Dieuwert P.N.; Bootsman, Rob J.; Bruinsma, Quinten; Shen, Yiyu; Krause, Sebastian; Quay, Rüdiger; Pelk, Marco J.; van Rijs, Fred; Heeres, Rob M.; Pires, Sergio; Alavi, Morteza; de Vreede, Leo C.N.;
In 2020 50th European Microwave Conference (EuMC),
pp. 1-4, 2021. DOI: 10.23919/EuMC48046.2021.9338122
On-Chip Output Stage Design for a Continuous Class-F Power Amplifier
Kumaran, Anil Kumar; Pashaeifar, Masoud; D’Avino, Marco; de Vreede, Leo C. N.; Alavi, Morteza S.;
In 2021 IEEE International Symposium on Circuits and Systems (ISCAS),
pp. 1-5, 2021. DOI: 10.1109/ISCAS51556.2021.9401788
A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications
Pashaeifar, Masoud; Kumaran, Anil K.; Beikmirza, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2021 IEEE Asian Solid-State Circuits Conference (A-SSCC),
pp. 1-3, 2021. DOI: 10.1109/A-SSCC53895.2021.9634772
A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS
Feng, Jun; Beikmirza, Mohammadreza; Mehrpoo, Mohammadreza; de Vreede, Leo C.N.; Alavi, Morteza S.;
In 2021 18th International SoC Design Conference (ISOCC),
pp. 41-42, 2021. DOI: 10.1109/ISOCC53507.2021.9613887
A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal
Mortazavi, Mohsen; Shen, Yiyu; Mul, Dieuwert. P. N.; de Vreede, Leo C. N.; Spirito, Marco; Babaie, Masoud;
In 2021 IEEE Custom Integrated Circuits Conference (CICC),
pp. 1-2, 2021. DOI: 10.1109/CICC51472.2021.9431396
An 18.5 W Fully-Digital Transmitter with 60.4 % Peak System Efficiency
Bootsman, R.J.; Mul, D.P.N.; Shen, Y.; Heeres, R.M.; van Rijs, F.; Alavi, M.S.; de Vreede, L.C.N.;
In 2020 IEEE/MTT-S International Microwave Symposium (IMS),
pp. 1113-1116, 2020. DOI: 10.1109/IMS30576.2020.9223942
A 1–3 GHz I/Q Interleaved Direct-Digital RF Modulator As A Driver for A Common-Gate PA in 40 nm CMOS
Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leo C.N.;
In 2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
pp. 287-290, 2020. DOI: 10.1109/RFIC49505.2020.9218324
A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS
Shen, Yiyu; Bootsman, Rob; Alavi, Morteza S.; de Vreede, Leonardus;
In 2020 IEEE Custom Integrated Circuits Conference (CICC),
pp. 1-4, 2020. DOI: 10.1109/CICC48029.2020.9075949
Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
Volume 3, Issue 1, pp. 48--55, March 2019. DOI: 10.1109/JERM.2018.2882564

Abstract: ...
A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.
Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
Vlachogiannakis, Gerasimos; Hu, Zhebin; Shivamurthy, Harshitha Thippur; Neto, Andrea; Pertijs, Michiel A. P.; de Vreede, Leo C. N.; Spirito, Marco;
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
Volume 3, Issue 1, pp. 48-55, 2019. DOI: 10.1109/JERM.2018.2882564
Miniaturized Broadband Microwave Permittivity Sensing for Biomedical Applications
G. Vlachogiannakis; Z. Hu; Thippur Shivamurthy, H.; A. Neto; M.A.P. Pertijs; L.C.N. de Vreede; M. Spirito;
IEEE Journal of Electromagnetics, RF and Microwaves in Medicine and Biology,
Volume 3, Issue 1, pp. 48-55, Mar. 2019. DOI: 10.1109/JERM.2018.2882564
A Highly Linear Wideband Polar Class-E CMOS Digital Doherty Power Amplifier
Hashemi, Mohsen; Zhou, Lei; Shen, Yiyu; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 67, Issue 10, pp. 4232-4245, 2019. DOI: 10.1109/TMTT.2019.2933204
Digital Transmitters for Sub-6GHz Wireless Applications
Leo de Vreede;
In IEEE International Solid-State Circuits Conference (ISSCC) Forum,
2019.
A Wideband Linear $I/Q$ -Interleaving DDRM
Mehrpoo, Mohammadreza; Hashemi, Mohsen; Shen, Yiyu; de Vreede, Leo C. N.; Alavi, Morteza S.;
IEEE Journal of Solid-State Circuits,
Volume 53, Issue 5, pp. 1361-1373, 2018. DOI: 10.1109/JSSC.2017.2786685
A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
Vlachogiannakis, Gerasimos; Pertijs, Michiel A. P.; Spirito, Marco; de Vreede, Leo C. N.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 66, Issue 3, pp. 1619-1634, 2018. DOI: 10.1109/TMTT.2017.2753228
A 40-nm CMOS Complex Permittivity Sensing Pixel for Material Characterization at Microwave Frequencies
G. Vlachogiannakis; M. A. P. Pertijs; M. Spirito; L. C. N. de Vreede;
IEEE Transactions on Microwave Theory and Techniques,
Volume 66, Issue 3, pp. 1619-1634, March 2018. DOI: 10.1109/tmtt.2017.2753228

Abstract: ...
A compact sensing pixel for the determination of the localized complex permittivity at microwave frequencies is proposed. Implemented in the 40-nm CMOS, the architecture comprises a square patch, interfaced to the material-under-test sample, that provides permittivity-dependent admittance. The patch admittance is read out by embedding the patch in a double-balanced, RF-driven Wheatstone bridge. The bridge is cascaded by a linear, low-intermediate frequency switching downconversion mixer, and is driven by a square wave that allows simultaneous characterization of multiple harmonics, thus increasing measurement speed and extending the frequency range of operation. In order to allow complex permittivity measurement, a calibration procedure has been developed for the sensor. Measurement results of liquids show good agreement with theoretical values, and the measured relative permittivity resolution is better than 0.3 over a 0.1-10-GHz range. The proposed implementation features a measurement speed of 1 ms and occupies an active area of 0.15x0.3 mm², allowing for future compact arrays of multiple sensors that facilitate 2-D dielectric imaging based on permittivity contrast.
High Efficiency and Wide Bandwidth Quasi-Load Insensitive Class-E Operation Utilizing Package Integration
Qureshi, Abdul Raheem; Acar, Mustafa; Pires, Sergio C.; de Vreede, Leo Cornelis Nicolaas;
IEEE Transactions on Microwave Theory and Techniques,
Volume 66, Issue 12, pp. 5310-5321, 2018. DOI: 10.1109/TMTT.2018.2868876
Quasi-load insensitive class-E for Doherty and Outphasing Transmitters
Leo de Vreede; Morteza S. Alavi;
In IEEE MTT-S International Microwave Symposium (IMS), Workshop,
2018.
Pushing the Linearity Limits of a Digital Polar Transmitter
Hashemi, Mohsen; Alavi, Morteza S.; De Vreede, Leo C.N.;
In 2018 13th European Microwave Integrated Circuits Conference (EuMIC),
pp. 174-177, 2018. DOI: 10.23919/EuMIC.2018.8539964
A 5x5 Microwave Permittivity Sensor Matrix in 0.14-μm CMOS
Z. Hu; G. Vlachogiannakis; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
In Proc. IEEE MTT-S International Microwave Symposium (IMS),
6 2018. DOI: 10.1109/MWSYM.2018.8439438
A Compact Energy Efficient CMOS Permittivity Sensor Based on Multi-Harmonic Downconversion and Tunable Impedance Bridge
G. Vlachogiannakis; Z. Hu; H. T. Shivamurthy; A. Neto; M. A. P. Pertijs; L. C. N. de Vreede; M. Spirito;
In Int. Microwave Biomedical Conference (IMBioC),
pp. 1--3, June 2018. DOI: 10.1109/IMBIOC.2018.8428950

Abstract: ...
This paper presents a 0.15×0.3 mm2 complex permittivity sensor integrated in a 40-nm CMOS node. A single-ended patch, employed as a near-field sensing element, is integrated with a double-balanced, fully-differential tunable impedance bridge that is driven by a square RF pulse. The multi-harmonic, intermediate-frequency down-conversion architecture achieves a compact form factor and fast multi-frequency readout. Measurement results show good agreement with theoretical values and the measured relative permittivity variation remains below 0.3 over a 0.1-10 GHz range at a 1-ms measurement time. The energy efficiency resulting from the fast measurement time and the record-small active area allows integration in battery-operated wearables.
Bits-In / RF-Out Transmitters for 5G mMIMO
Leo de Vreede; Morteza S. Alavi;
In IEEE European Microwave Week (EuMIC) Workshop,
2018.
A Compact Energy Efficient CMOS Permittivity Sensor Based on Multiharmonic Downconversion and Tunable Impedance Bridge
Vlachogiannakis, G.; Hu, Z.; Shivamurthy, H. Thippur; Neto, A.; Pertijs, M.A.P; de Vreede, L. C. N.; Spirito, M.;
In 2018 IEEE International Microwave Biomedical Conference (IMBioC),
pp. 1-3, 2018. DOI: 10.1109/IMBIOC.2018.8428950
A wideband I/Q RFD AC-based phase modulator
Shen, Yiyu; Polushkin, Michael; Mehrpoo, Mohammadreza; Hashemi, Mohsen; McCune, Earl; Alavi, Morteza S.; de Vreede, Leo C. N.;
In 2018 IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),
pp. 8-11, 2018. DOI: 10.1109/SIRF.2018.8304215
A 5×5 Microwave Permittivity Sensor Matrix in O.14-m CMOS
Hu, Zhebin; Vlachogiannakis, Gerasimos; Pertijs, Michiel A.P.; de Vreede, Leo; Spirito, Marco;
In 2018 IEEE/MTT-S International Microwave Symposium - IMS,
pp. 1160-1163, 2018. DOI: 10.1109/MWSYM.2018.8439438
An Intrinsically Linear Wideband Polar Digital Power Amplifier
Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Alavi, Morteza S.; de Vreede, Leo C. N.;
IEEE Journal of Solid-State Circuits,
Volume 52, Issue 12, pp. 3312-3328, 2017. DOI: 10.1109/JSSC.2017.2737647
An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
M. Hashemi; Y. Shen; M. Mehrpoo; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
pp. 300-301, February 2017. DOI: 10.1109/ISSCC.2017.7870380
document
A fully-integrated digital-intensive polar Doherty transmitter
Y. Shen; M. Mehrpoo; M. Hashemi; M. Polushkin; L. Zhou; M. Acar; R. van Leuken; M. S. Alavi; L. de Vreede;
In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
pp. 196-199, June 2017. DOI: 10.1109/RFIC.2017.7969051
document
A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
M. Mehrpoo; M. Hashemi; Y. Shen; R. van Leuken; M. S. Alavi; L. C. N. de Vreede;
In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
pp. 188-191, June 2017. DOI: 10.1109/RFIC.2017.7969049
document
17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking
Hashemi, Mohsen; Shen, Yiyu; Mehrpoo, Mohammadreza; Acar, Mustafa; van Leuken, René; Alavi, Morteza S.; de Vreede, Leonardus;
In 2017 IEEE International Solid-State Circuits Conference (ISSCC),
pp. 300-301, 2017. DOI: 10.1109/ISSCC.2017.7870380
Enhanced Bipolar Transistor Design for the Linearization of the Base-Collector Capacitance
Jordi vd Meulen; Leo de Vreede;
In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
2017.
A linearization technique for bipolar amplifiers based on derivative superposition
D'Avino, M.; van der Meulen, J.M.M; Malotaux, E.S.; Pelk, M.; de Vreede, L.C.N.; Groenewegen, M.W.A.; Mattheijssen, P.; van der Heijden, M.P.;
In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
pp. 13-16, 2017. DOI: 10.1109/BCTM.2017.8112901
Enhanced bipolar transistor design for the linearization of the base-collector capacitance
van der Meulen, J.M.M.; de Vreede, L.C.N.;
In 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM),
pp. 126-129, 2017. DOI: 10.1109/BCTM.2017.8112926
High efficiency RF power amplifiers featuring package integrated load insensitive class-E devices
Qureshi, Abdul R.; Acar, Mustafa; Pires, Sergio; de Vreede, Leo C. N.;
In 2017 IEEE MTT-S International Microwave Symposium (IMS),
pp. 2029-2032, 2017. DOI: 10.1109/MWSYM.2017.8059067
A wideband linear direct digital RF modulator using harmonic rejection and I/Q-interleaving RF DACs
Mehrpoo, M.; Hashemi, M.; Shen, Y.; van Leuken, R.; Alavi, M. S.; de Vreede, L. C. N.;
In 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC),
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An Ultra-Low-Power BPSK Receiver and Demodulator Based on Injection-Locked Oscillators
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A 550–1050MHz +30dBm class-E power amplifier in 65nm CMOS
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A GaAs Junction Varactor With a Continuously Tunable Range of 9 : 1 and an $OIP_3$ of 57 dBm
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Enhanced RF power amplifiers and device characterization setups using coherent mixed-signal techniques
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A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
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A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS
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A 67 dBm OIP3 Multistacked Junction Varactor
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A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
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50 GHz Integrated Distributed Phase Shifter based on novel Silicon-on-Glass Varactor Diodes
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A highly efficient chireix amplifier using adaptive power combining
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50 GHz Integrated Distributed Phase Shifter Based on Novel Silicon-on-Glass Varactor Diodes
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In 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems,
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A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
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IEEE Microwave and Wireless Components Letters,
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A Mixed-Signal Approach Towards Linear and Efficient $N$-Way Doherty Amplifiers
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IEEE Transactions on Microwave Theory and Techniques,
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A Monolithic Low-Distortion Low-Loss Silicon-on-Glass Varactor-Tuned Filter With Optimized Biasing
Buisman, Koen; de Vreede, Leo C. N.; Larson, Lawrence E.; Spirito, Marco; Akhnoukh, Atef; Lin, Yu; Liu, Xiao-dong; Nanver, Lis K.;
IEEE Microwave and Wireless Components Letters,
Volume 17, Issue 1, pp. 58-60, 2007. DOI: 10.1109/LMWC.2006.887262
Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
K. Buisman; C. Huang; A. Akhnoukh; M. Mar.etti; L. C. N. de Vreede; L. E. Larson; L. K. Nanver;
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A Low-Loss Compact Linear Varactor Based Phase-Shifter
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In Proc. IEEE RFIC (Radio Frequency Integrated Circuits) Symposium,
Honolulu, Hawaii,USA, pp. 453-456, Jun. 2007.
A low-cost pulsed RF I-V measurement setup for isothermal device characterization
Marchetti, M.; Buisman, K.; Pelk, M.; Smith, L.; de Vreede, L.C.N.;
In 2007 70th ARFTG Microwave Measurement Conference (ARFTG),
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A Low-Loss Compact Linear Varactor Based Phase-Shifter
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Varactor Topologies for RF Adaptivity with Improved Power Handling and Linearity
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In 2007 IEEE/MTT-S International Microwave Symposium,
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IEEE Journal of Solid-State Circuits,
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Active Harmonic Load–Pull for On-Wafer Out-of-Band Device Linearity Optimization
Spirito, Marco; Pelk, Marco J.; van Rijs, Fred; Theeuwen, Steven J. C. H.; Hartskeerl, Dave; de Vreede, Leo C. N.;
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Volume 54, Issue 12, pp. 4225-4236, 2006. DOI: 10.1109/TMTT.2006.885568
Silicon-on-glass technology for RF and microwave device fabrication
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In 2006 68th ARFTG Conference: Microwave Measurement,
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Silicon-on-glass technology for RF and microwave device fabrication
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A 5.5-GHz Power Amplifier For Wide Bandwidth Polar Modulator
Zheng, Renliang; Sanduleanu, Mihai; Aditham, R.P.; de Vreede, L.C.N.; Ren, Junyan;
In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings,
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"Linearization Techniques at the Device and Circuit Level" (Invited)
de Vreede, L.C.N.; van der Heijden, M.P.;
In 2006 Bipolar/BiCMOS Circuits and Technology Meeting,
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Surface-passivated high-resistivity silicon as a true microwave substrate
M. Spirito; F. de Paola; L. K. Nanver; E. Valletta; B. Rong; B. Rejaei; L. C. N. de Vreede; J. N. Burghartz;
IEEE Transactions on Microwave Theory and Techniques,
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Surface-passivated high-resistivity silicon as a true microwave substrate
Spirito, M.; De Paola, F.M.; Nanver, L.K.; Valletta, E.; Bifeng Rong; Rejaei, B.; de Vreede, L.C.N.; Burghartz, J.N.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 53, Issue 7, pp. 2340-2347, 2005. DOI: 10.1109/TMTT.2005.850435
High-Performance Varactor Diodes Integrated in a Silicon-on-Glass Technology
K. Buisman; L. K. Nanver; T. L. M. Scholtes; H. Schellevis; L. C. N. de Vreede;
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K. Buisman; L.C.N de Vreede; L.E. Larson; M. Spirito; A. Akhnoukh; Y. Lin; X. Liu; L.K. Nanver;
In Proc. IEEE Radio Frequency Integrated Circuits Symposium,
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Distortion-free varactor diode topologies for RF adaptivity
K. Buisman; L.C.N de Vreede; L.E. Larson; M. Spirito; A. Akhnoukh; T.L.M. Scholtes; L.K. Nanver;
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Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
W. C. E Neo; X. Liu; Y. Lin; L. C. N. de Vreede; M. Spirito; A. Akhnoukh; L. K. Nanver; L. E. Larson; A. de Graauw;
In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting BCTM,
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“Distortion-Free” Varactor Diode Topologies for RF Adaptivity
Buisman, K.; de Vreede, L. C. N.; Larson, L.E.; Spirito, M.; Akhnoukh, A.; Scholtes, T.L.M.; Nanver, L. K.;
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Improved hybrid SiGe HBT class-AB power amplifier efficiency using varactor-based tunable matching networks
Neo, W.C.E.; Liu, X.; Lin, Y.; de Vreede, L.C.N.; Larson, L.E.; Spirito, S.; Akhnoukh, A.; de Graauw, A.; Nanver, L.K.;
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Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers
Spirito, M.; van der Heijden, M.P.; Pelk, M.; de Vreede, L.C.N.; Zampardi, P.J.; Larson, L.E.; Burghartz, J.N.;
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High-performance varactor diodes integrated in a silicon-on-glass technology
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On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match
van der Heijden, M.P.; de Vreede, L.C.N.; Burghartz, J.N.;
IEEE Journal of Solid-State Circuits,
Volume 39, Issue 10, pp. 1727-1736, 2004. DOI: 10.1109/JSSC.2004.833759
The Electro-Thermal Smoothie Database Model for LDMOS Devices
V. Cuoco; W.C.E. Neo; M. Spirito; O.Yanson; N. Nenadovic; L.C.N. de Vreede; H.F.F. Jos; J.N. Burghartz;
In Proc. ESSDERC,
Leuven, Belgium, pp. 457-460, Sep. 2004. ISBN 0-7803-8479-2.
A New Extraction Technique for the Series Resistances of Semiconductor Devices Based on the Intrinsic Properties of Bias-Dependent Y-Parameters
V. Cuoco; W.C.E. Neo; L.C.N de Vreede; H.C de Graaff; L.K. Nanver; H.C. Wu; H.F.F Jos; J.N. Burghartz;
In Proc. Bipolar/BiCMOS Circuits and Technology Meeting 2004 (BCTM 2004),
Montreal, Canada, pp. 148-151, Sep. 2004.
Design and Characterization of a High-Resistivity Silicon Traveling Wave Amplifier for 10 Gb/s Optical Communucation Systems
F.M. De Paola; L.C.N. de Vreede; L.K. Nanver; N. Rinaldi; J.N. Burghartz;
In J.D. Cressler; J. Papapolymerou (Ed.), 2004 Topical Meeting on Silicon Monolithic Integrated Circuits RF Systems,
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Large signal verification of the circuit-oriented smoothie database model for LDMOS devices
Cuoco, V.; Yanson, O.; Hammes, P.; Spirito, M.; de Vreede, L.C.N.; Steenwijk, A.v.; Versleijen, M.; Neo, W.C.E.; Jos, H.F.F.; Burghartz, J.N.;
In 34th European Microwave Conference, 2004.,
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A technique to linearize LDMOS power amplifiers based on derivative superposition and out-of-band impedance optimization
W.C.E. Neo; van der Heijden, M.P.; de Vreede, L.C.N.; Spirito, M.; Cuoco, V.; van Rijs, F.;
In 34th European Microwave Conference, 2004.,
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Design and characterization of a high-resistivity silicon traveling wave amplifier for 10 Gb/s optical communication systems
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Base-band impedance control and calibration for on-wafer linearity measurements
Pelk, M.J.; de Vreede, L.C.N.; Spirito, M.; Jos, J.H.;
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A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]
Cuoco, V.; Neo, W.C.E.; de Vreede, L.C.N.; de Graaff, H.C.; Nanver, L.K.; Buisman, K.; Wu, H.C.; Jos, H.F.F.; Burghartz, J.N.;
In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
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On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers
van der Heijden, M.P.; Spirito, M.; Pelk, M.; de Vreede, L.C.N.; Burghartz, J.N.;
In Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting,
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The electro-thermal Smoothie database model for LDMOS devices
Cuoco, V.; Neo, W.C.E.; Spirito, M.; Yanson, O.; Nenadovic, N.; de Vreede, L.C.N.; Jos, H.F.F.; Burghartz, J.N.;
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A novel active harmonic load-pull setup for on-wafer device linearity characterization
Spirito, M.; de Vreede, L.C.N.; de Kok, M.; Pelk, M.; Hartskeerl, D.; Jos, H.F.F.; Mueller, J.E.; Burghartz, J.;
In 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535),
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Power amplifier PAE and ruggedness optimization by second-harmonic control
M. Spirito; L.C.N. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
IEEE Journal of Solid-State Circuits,
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A Wideband Distributed Silicon Driver for 10 Gb/s External Modulators
F.M. De Paola; L.C.N. de Vreede; N. Rinaldi; J.N. Burghartz;
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Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications
M. Spirito; L.C.N. de Vreede; L.K. Nanver; J. Mueller; J.N. Burghartz;
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Garmisch, Southern Germany, pp. 49-52, Apr. 2003.
A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
M.P. van der Heijden; M. Spirito; L.C.N. de Vreede; F. van Straten; J.N. Burghartz;
In 2003 IEEE MTT-S International Microwave Symposium,
Philadelphia, PA, USA, pp. 235 -238, Jun. 2003.
A Calibration Procedure for On-Wafer Differential Load-Pull Measurements
M. Spirito; M.P. van der Heijden; M. de Kok; L.C.N. de Vreede;
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Design and characterization of integrated passive elements on high ohmic silicon
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In 2003 IEEE MTT-S International Microwave Symposium,
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A High Performance Unilateral 900 MHz LNA with Simultaneous Noise, Impedance, and IP3 Match
M.P. van der Heijden; L.C.N. de Vreede; F. van Straten; J.N. Burghartz;
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A calibration procedure for on-wafer differential load-pull measurements
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A 2 GHz high-gain differential InGaP HBT driver amplifier matched for high IP3
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Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
M.P van der Heijden; H.C. de Graaff; L.C.N. de Vreede; J.R. Gajadharsing; J.N. Burghartz;
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A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers
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Theory and design of an ultra-linear square-law approximated LDMOS power amplifier in class-AB operation
van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
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A 1.8 GHz Integrated LNA using a Novel RF Si Technology
F.M. De Paola; L.C.N. de Vreede; L. Nanver; B. Rejaei; N. Rinaldi; J.N. Burghartz;
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Verification of the IMD Behavior of the Smoothie Database Model for FET Devices
V. Cuoco; M.P. van der Heijden; M. Pelk; L.C.N. de Vreede;
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Veldhoven, The Netherlands, STW, pp. 14-21, Nov. 2002. ISBN 90-73461-33-2.
Power Amplifier Optimization for Mobile Application by Second Harmonic Control
M. Spirito; L.N.C. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
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Veldhoven, The Netherlands, pp. 471-475, Nov. 2002.
Design of Planar Mar.and Balun for MMIC Applications
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The Effect on Non-Saturated Electron Drift Velocity on Bipolar Device Linearity
L.C.N. de Vreede; H.C. de Graaff; B. Rejeai;
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Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
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Experimental Verification of the Smoothie Database Model for Third and Fifth Order Intermodulation Distortion
V. Cuoco; M.P. van d. Heijden; M. Pelk; L.C.N. de Vreede;
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Implementation of an isothermal non-linear device characterization system using the ICCAP program
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The smoothie data base model for the correct modeling of non-linear distortion in FET devices
V. Cuoco; M.P. van d. Heijden; L.C.N. de Vreede;
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The effect of non-saturated electron drift velocity on bipolar device linearity
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The "Smoothie" data base model for the correct modeling of non-linear distortion in FET devices
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Introduction to the 2000 bipolar/BiCMOS circuits and technology meeting
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Reduction of UHF power transistor distortion with a nonuniform collector doping profile
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Reduction of UHF power transistor distortion with a nonuniform collector doping profile
van Noort, W.D.; de Vreede, L.C.N.; Jos, H.F.F.; Nanver, L.K.; Slotboom, J.W.;
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Introduction to the 2000 Bipolar/BiCMOS Circuits and Technology Meeting
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Volume 36, Issue 9, pp. 1371-1372, 2001. DOI: 10.1109/JSSC.2001.944665
Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
M.P. van der Heijden; J.R. Gajadharsing; B. Rejaei; L.C.N. de Vreede;
In B. Sigmon (Ed.), 2001 IEEE MTT-S International Microwave Symposium,
Phoenix, AZ, USA, pp. 1679-1682, May 2001. ISBN: 0-7803-6538-0.
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Power Amplifier PAE and Ruggedness Optimization by Second Harmonic Control
M. Spirito; L.N.C. de Vreede; L.K. Nanver; S. Weber; J.N. Burghartz;
In ProRISC 2001,
Veldhoven, The Netherlands, pp. 623-629, Nov. 2001.
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A Single Chip 1.8 GHz LNA and Power Amplifier with Improved Isolation Using Micromachining
F.M. De Paola; L.C.N de Vreede; L.K. Nanver; B. Rajaei; N.P. Pham; N. Rinaldi; J.N. Burghartz;
In SAFE 2001,
Veldhoven, The Netherlands, pp. 35-41, Nov. 2001.
Isothermal Non-Linear Device Characterization
V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
In ProRISC 2001,
Veldhoven, The Netherlands, pp. 338-341, Nov. 2001.
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A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
M.P. van der Heijden; H.C. de Graaff.; L.C.N. de Vreede;
In Proceedings of the 2001 Bipolar/BiCMOS Circuits and Technology Meeting,
Minneapolis, MN, USA, pp. 163-166, Sept. 2001. ISBN 0-7803-7019-8.
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Isothermal Large Signal Device Characterization
V. Cuoco; M. de Kok; M.P. van d. Heijden; L.C.N. de Vreede;
In ARFTG Conference,
San Diego, Nov. 2001.
Isothermal Non-Linear Device Characterization
Cuoco, V.; de Kok, M.; Heijden, M.P.v.d.; de Vreede, L.C.N.;
In 58th ARFTG Conference Digest,
pp. 1-4, 2001. DOI: 10.1109/ARFTG.2001.327493
A novel frequency independent third-order intermodulation distortion cancellation technique for BJT amplifiers
van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.;
In Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212),
pp. 163-166, 2001. DOI: 10.1109/BIPOL.2001.957882
Linearity optimization of a distributed base station amplifier using an automated high-speed measurement protocol
van der Heijden, M.P.; Gajadharsing, J.R.; Rejaei, B.; de Vreede, L.C.N.;
In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
pp. 1679-1682 vol.3, 2001. DOI: 10.1109/MWSYM.2001.967228
Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations
van der Heijden, M.P.; de Graaff, H.C.; de Vreede, L.C.N.; Gajadharsing, J.R.; Burghartz, J.N.;
In 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157),
pp. 1363-1366 vol.2, 2001. DOI: 10.1109/MWSYM.2001.967149
Direct Mextram Parameter Computation Based on Transistor Layout and Doping Profile
D. di Crescenzo; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
In SAFE 2000,
pp. 37-42, 2000.
A High Speed Measurement Protocol for Optimizing Amplifier Linearity
M. van der Heijden; L.C.N. de Vreede;
In PRORISC 2000,
pp. 307-310, 2000.
Reduction of distorsion with a non-uniform BJT collector doping profile
W.D. van Noort; L.C.N. de Vreede; H.F.F. Jos; L.K. Nanver; J.W. Slotboom;
In Proceedings SAFE 2000,
Veldhoven, pp. 113-118, 2000.
Reduction of UHF power distortion with a non-uniform collector doping profile
W.D. van Noort; H.F.F. Jos; L.C.N. de Vreede; L.K. Nanver; J.W. Slotboom;
In Proceedings of the 2000 BCTM,
Minneapolis, Minnesota, Sept 24-26, 2000, pp. 126-129, 2000. ISBN 0-7803-6384-1/-X/-8.
A Mixed Level Simulator for the Large Signal Optimization of LDMOS Devices
V. Cuoco; M.P. van der Heijden; S. Mijalkovic; N. Rinaldi; H.C. de Graaff; L.C.N. de Vreede;
In Proc. 3rd Workshop on Semiconductor Advances for Future Electronics,
Veldhoven, pp. 42-47, 2000.
Modelling and Characterization of HF Large-signal Device Operation
L.C.N. de Vreede;
In Europractice workshop High Speed Devices and Circuits for Analog Applications Beyond 3 GHz,
Germany, Feb. 2000.
Bipolar transistor epilayer design using the MAIDS mixed-level simulator
L.C.N. de Vreede; H.C. de Graaff; Willemen; J.A.; W. van Noort; Jos; R.; Larson; L.E.; J.W. Slotboom; J.L. Tauritz;
IEEE J. Solid-State Circuits,
Volume 34, Issue 9, pp. 1331-1338, Sept. 1999.
Bipolar transistor epilayer design using the MAIDS mixed-level simulator
de Vreede, L.C.N.; de Graaff, H.C.; Willemen, J.A.; van Noort, W.; Jos, R.; Larson, L.E.; Slotboom, J.W.; Tauritz, J.L.;
IEEE Journal of Solid-State Circuits,
Volume 34, Issue 9, pp. 1331-1338, 1999. DOI: 10.1109/4.782094
The impact of silicon MMICs on system designs
L.E. Larson; L.C.N. de Vreede;
In 29th European Microwave Conference 1999,
Munich, pp. 166-169, Oct. 1999.
The Impact of Silicon Technology on Future Microwave Systems
Larson, Lawrence E.; de Vreede, Leo C.N.;
In 1999 29th European Microwave Conference,
pp. 166-169, 1999. DOI: 10.1109/EUMA.1999.338299
Extension of the collector charge description for compact bipolar epilayer models
L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; Baets; R.G.F;
IEEE Tr. Electron Devices,
Volume 45, Issue 1, pp. 277-285, Jan. 1998.
Extension of the collector charge description for compact bipolar epilayer models
de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
IEEE Transactions on Electron Devices,
Volume 45, Issue 1, pp. 277-285, 1998. DOI: 10.1109/16.658842
Impact of CDMA Specifications on Circuit Design
R. Mahmoudi; H.C. de Graaff; L.C.N. de Vreede; J.L. Tauritz;
In Workshop on Low Cost Si-based Technology for Wireless Applications IEEE RFIC Symposium,
Baltimore, Jun. 1998.
1.8 GHz Active Microwave Filter realized in SiGe for Mobile Communications
M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
In Proceedings of XIII Conference on Design of Circuits and Integrated Systems (DCIS'98),
Madrid, Nov. 1998.
Optimisation of the base-collector doping profile for high-frequency distortion
W. van Noort; L.C.N. de Vreede; L.K. Nanver; H.C. de Graaff; J.W. Slotboom;
In Proc. 28th ESSDERC,
France, pp. 496-499, Sep. 1998.
Active Microwave Filters realized in SiGe Technology
M.J.M. Martinez; L.C.N. de Vreede; J.L. Tauritz;
In MTT-S European Wireless 98,
Amsterdam, pp. 110-115, Oct. 1998.
Performance of MEXTRAM and its Comparison with VBIC 95
H.C. de Graaff; W.J. Kloosterman; L.C.N. de Vreede;
In Hewlett-Packard SCCT Modelling Seminar,
Tokyo, May 1998.
Optimum dimensions of the epilayer for third-order intermodulation distortion
L.C.N. de Vreede; W. van Noort; H.F.F. Jos; H.C. de Graaff; J.W. Slotboom; J.L. Tauritz;
In Proc. Bipolar/BiCMOS Circuits and Technology Meeting,
pp. 168-171, Sept. 1998.
Optimisation of the base-collector doping profile for high-frequency distortion
van Noort, W.; de Vreede, L.C.N.; Nanver, L.K.; de Graaff, H.C.; Slotboom, J.W.;
In 28th European Solid-State Device Research Conference,
pp. 496-499, 1998.
Optimum dimensions of the epilayer for third-order intermodulation distortion
de Vreede, L.C.N.; van Noort, W.; Jos, H.F.F.; de Graaff, H.C.; Slotboom, J.W.; Tauritz, J.L.;
In Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198),
pp. 168-171, 1998. DOI: 10.1109/BIPOL.1998.741916
MAIDS: A microwave active integral device simulator
L. de Vreede; W. van Noort; H.C. de Graaff; J.L. Tauritz; J. Slotboom;
In Proceedings of the 27th ESSDERC,
Stuttgart, Germany, pp. 108-111, Sept. 1997.
MAIDS: A Microwave Active Integral Device Simulator
de Vreede, L.C.N.; Noort, W.V.; de Graaff, H.C.; Tauritz, J.L.; Slotboom, J.;
In 27th European Solid-State Device Research Conference,
pp. 180-183, 1997. DOI: 10.1109/ESSDERC.1997.194395
Advanced modeling of distortion effects in bipolar transistors using the Mextram model
L.C.N. de Vreede; H.C. de Graaff; Mouthaan; K.; de Kok; M.; J.L. Tauritz; Baets; R.G.F;
J. Solid-State Circuits,
Volume 31, Issue 1, pp. 114-121, Jan. 1996.
Plasma_enhanced chemical vapor deposition of thick silicon nitride films with low stress on InP
L. Shi; C. A. M. Steenbergen; A. H. de Vreede; M. K. Smit; T. L. M. Scholtes; F. H. Groen; J. W. Pedersen;
J. Vac. Sci. Technol. A,
Volume 14, pp. 471, 1996.
System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
C.A.M. Steenbergen; M.O. van Deventer; L.C.N. de Vreede; C. van Dam; M.K. Smit; B.H. Verbeek;
In Proc. OFC 1996,
San Jose, CA, USA, pp. 310-311, Feb. 1996.
System performance of a 4-channel PHASAR WDM receiver operating at 1.2 Gbit/s
Steenbergen, C.A.M.; van Deventer, M.O.; de Vreede, L.C.N.; van Dam, C.; Smit, M.K.; Verbeek, B.H.;
In Optical Fiber Communications, OFC.,
pp. 310-311, 1996. DOI: 10.1109/OFC.1996.908319
HF Silicon ICs for Wide-band Communication Systems
L.C.N. de Vreede;
PhD thesis, Delft University of Technology, Jun 1996.
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4-channel wavelength flattened demultiplexer integrated with photodetectors
C. A. M. Steenbergen; C van Dam; T. L. M. Scholtes; A. H. de Vreede; L. Shi; J.J.G.M van der Tol; P. Demeester; M.K. Smit;
In Proc. 7th Eur. Conf. on Int. Opt. (ECIO �95),
1995.
Integrated 1 GHz 4-channel InP phasar based WDM-receiver with Si bipolar frontend array
C.A.M. Steenbergen; L.C.N. de Vreede; C. van Dam; T.L.M. Scholtes; M.K. Smit; J.L. Tauritz; J.W. Pedersen; I. Moerman; B.H. Verbeek; R.G.F. Baets;
In Proc. ECOC 1995,
Brussels, Belgium, pp. 211-214, Sept. 1995.
CAD-tool for integrated optics
X.J.M. Leijtens; L.H. Spiekman; C. van Dam; L.C.N. de Vreede; M.K. Smit; J.L. Tauritz;
In Proc. ECIO 1995,
Delft, The Netherlands, pp. 463-466, Apr. 1995.
Extension of the collector charge description for compact bipolar epilayer models
L.C.N. de Vreede; H.C. de Graaff; J.L. Tauritz; R.G.F. Baets;
In Proc. ESSDERC 1995,
The Hague, The Netherlands, pp. 229-232, Sep. 1995.
Extension of the collector charge description for compact bipolar epilayer models
de Vreede, L.C.N.; de Graaff, H.C.; Tauritz, J.L.; Baets, R.G.F.;
In ESSDERC '95: Proceedings of the 25th European Solid State Device Research Conference,
pp. 63-66, 1995.
A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
L.C.N. de Vreede; A.C. Dambrine; J.L. Tauritz; R.G.F. Baets;
IEEE Transactions on Microwave Theory and Techniques,
Volume 42, Issue 4, pp. 546-552, Apr. 1994.
A figure of merit for the high-frequency noise behavior of bipolar transistors
L.C.N. de Vreede; H.C. de Graaff; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
IEEE Journal of Solid State Circuits,
Volume 29, Issue 10, pp. 1220-1226, Oct. 1994.
A figure of merit for the high-frequency noise behavior of bipolar transistors
de Vreede, L.C.N.; de Graaff, H.C.; Hurkx, G.A.M.; Tauritz, J.L.; Baets, R.G.F.;
IEEE Journal of Solid-State Circuits,
Volume 29, Issue 10, pp. 1220-1226, 1994. DOI: 10.1109/4.315206
A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
de Vreede, L.C.N.; Dambrine, A.C.; Tauritz, J.L.; Baets, R.G.F.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 42, Issue 4, pp. 546-552, 1994. DOI: 10.1109/22.285058
Advanced modelling of distortion effects in bipolar transistors using the Mextram model
L.C.N. de Vreede; H.C. de Graaff; K. Mouthaan; M. de Kok; J.L. Tauritz; R.G.F. Baets;
In Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1994),
Minneapolis, MN, USA, pp. 48-51, Oct. 1994.
Advanced modelling of distortion effects in bipolar transistors using the Mextram model
de Vreede, L.C.N.; de Graaff, H.C.; Mouthaan, K.; de Kok, M.; Tauritz, J.L.; Baets, R.G.F.;
In Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting,
pp. 48-51, 1994. DOI: 10.1109/BIPOL.1994.587854
A figure of merit for the high-frequency noise behaviour of bipolar transistors
H.C. de Graaff; L.C.N. de Vreede; G.A.M. Hurkx; J.L. Tauritz; R.G.F. Baets;
In Proc. 1993 IEEE BCTM,
Minneapolis, USA, pp. 118-121, Oct. 1993.
A high frequency model based on the physical structure of the ceramic multilayer capacitor
de Vreede, L.C.N.; de Kok, M.; van Dam, C.; Tauritz, J.L.;
IEEE Transactions on Microwave Theory and Techniques,
Volume 40, Issue 7, pp. 1584-1587, 1992. DOI: 10.1109/22.146342

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